Diamond Devices Break Limits: Scientists Unveil New High-Performance Nuclear-Grade Transistor

A step forward in the development of diamond CMOS integrated circuits. A research team at NIMS has developed the world’s first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). This breakthrough marks a significant step toward realizing CMOS (complementary metal-oxide-semiconductor) integrated circuits based on diamond, enabling their use in extreme environments and advancing the development of diamond-based […] Read More